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| RFP10N15 Data Sheet March 1999 File Number 1445.3 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09192. Features * 10A, 150V * rDS(ON) = 0.300 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER RFP10N15 PACKAGE TO-220AB BRAND RFP10N15 G S NOTE: When ordering, include the entire part number. Packaging TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP10N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP10N15 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 150 150 10 25 20 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0 VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, TC = 125oC MIN 150 2 VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) RFP10N15 TYP 40 165 90 90 MAX 4 1 25 100 0.300 3.0 60 250 135 135 850 230 100 2.083 UNITS V V A mA nA V ns ns ns ns pF pF pF oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance(Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS VGS = 20V, VDS = 0 ID = 10A, VGS = 10V, (Figures 6, 7) ID = 10A, VGS = 10V ID 5A, VDD = 75V, RG = 50, VGS = 10V, RL = 14.7 (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width 300s, Duty Cycle 2% 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 5A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 200 MAX 1.4 UNITS V ns 2 RFP10N15 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 50 100 150 12 10 8 6 4 2 0 25 0.8 0.6 0.4 0.2 0 50 TC, CASE TEMPERATURE (oC) 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 20 100 TC = 25oC ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC 15 VGS = 8V VGS = 20V VGS = 10V 10 VGS = 6V 5 VGS = 5V VGS = 4V VGS = 7V ID, DRAIN CURRENT (A) ID MAX CONTINUOUS 10 DC OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 1 0.1 0 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 0 1 6 7 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 9 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 20 25oC 125oC 10 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 15 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 -40oC VGS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 125oC 25oC -40oC 5 125oC -40oC 0 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 2 4 6 10 8 12 ID, DRAIN CURRENT (A) 14 16 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 3 RFP10N15 Typical Performance Curves 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s ID = 5A (Continued) 1.4 1.3 ID = 250A VDS = VGS NORMALIZED GATE THRESHOLD VOLTAGE 50 100 0 TJ, JUNCTION TEMPERATURE (oC) 150 1.5 VGS = 10V 1.2 1.1 1.0 0.9 0.8 0.7 1.0 0.5 0 -50 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 150 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 GATE SOURCE VDD = BVDSS VOLTAGE RL = 15 IG(REF) = 1mA VGS = 10V VGS, GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 800 112.5 VDD = BVDSS 8 600 6 75 400 COSS CRSS 0 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 37.5 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS 4 200 2 DRAIN SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4 RFP10N15 Test Circuits and Waveforms (Continued) CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 5 |
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